Guangli Luo

Title: Innovations of Guangli Luo in Epitaxial Layer Growth

Introduction

Guangli Luo is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the growth of epitaxial layers. With a total of 2 patents, his work has advanced the understanding and application of materials in electronics.

Latest Patents

One of Guangli Luo's latest patents is focused on the growth of GaAs epitaxial layers on silicon substrates using a novel GeSi buffer layer. This invention outlines a process that begins with the pre-cleaning of a silicon wafer, followed by the growth of a high Ge-composition epitaxial layer. The method effectively manages dislocations generated during the growth process, leading to the successful deposition of a GaAs layer on the Ge film.

Another significant patent involves a technique for growing high-quality ZnSe epitaxial layers on silicon substrates. This technique utilizes GeSi/Ge epitaxial layers to block dislocations and improve surface roughness. The innovative approach addresses challenges associated with growing polar materials on non-polar substrates, ensuring a high-quality ZnSe layer.

Career Highlights

Guangli Luo has worked with reputable organizations such as Witty Mate Corporation and National Yang Ming Chiao Tung University. His experience in these institutions has allowed him to refine his expertise in semiconductor materials and epitaxial growth techniques.

Collaborations

Throughout his career, Guangli Luo has collaborated with esteemed colleagues, including Tsung-Hsi Yang and Chung-Liang Lee. These partnerships have contributed to the advancement of research in the field of semiconductor technology.

Conclusion

Guangli Luo's innovative work in epitaxial layer growth has made a significant impact on semiconductor technology. His patents reflect a deep understanding of material science and engineering, paving the way for future advancements in the industry.