National Yang Ming Chiao Tung University

Witty Mate Corporation

Guangli Luo

Chun-Yen Chang

Edward Yi Chang

Tsung-Hsi Yang

Chung-Liang Lee

Tsung Hsi Yang

Chung Yen Chang

Tsung-Yeh Yang

Chu-Shou Yang

Wu-Ching Chou

This invention provides a process for growing Ge epitaxial layers on Si substrate by using ultra-high vacuum chemical vapor deposition (UHVCVD), and subsequently growing a GaAs layer on Ge film of the surface of said Ge epitaxial layers by using metal organic chemical vapor deposition (MOCVD). The process comprises steps of, firstly, pre-cleaning a silicon wafer in a standard cleaning procedure, dipping it with HF solution and prebaking to remove its native oxide layer. Then, growing a high Ge-composition epitaxial layer, such as SiGein a thickness of 0.8 &#x3bc;m on said Si substrate by using ultra-high vacuum chemical vapor deposition under certain conditions. Thus, many dislocations are generated and located near the interface and in the low of part of SGedue to the large mismatch between this layer and Si substrate. Furthermore, a subsequent 0.8 &#x3bc;m SiGelayer, and/or optionally a further 0.8 &#x3bc;m SiGelayer, are grown. They form strained interfaces of said layers can bend and terminate the propagated upward dislocation very effectively. Therefore, a film of pure Ge is grown on the surface of said epitaxial layers. Finally, a GaAs epitaxial layer is grown on said Ge film by using MOCVD.

Growth of GaAs epitaxial layers on Si substrate by using a novel GeSi buffer layer

A technique to grow high quality and large area ZnSe layer on Si substrate is provided, comprising growing GeSi/Ge epitaxial layers on Si substrate by using ultra-high vacuum chemical vapor deposition (UHVCVD), and finally growing a ZnSe film on top Ge buffer layers. Two concepts are applied in the process of this invention, the first one is to block the dislocations generated from GeSiepitaxial layers and to terminate the propagated upward dislocations by using strained interfaces, accordingly the dislocation density of ZnSe layer is greatly reduced and the surface roughness is improved; the second concept is to solve the problems of anti-phase domain due to growth of polar materials on non-polar material using off-cut angle Si substrate, and that is free from diffusion problems between different atoms while generally growing ZnSe layers on Si substrate.

Technique to grow high quality ZnSe epitaxy layer on Si substrate

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Hsinchu, Taiwan

Guangli Luo