Company Filing History:
Years Active: 2017-2025
Title: Innovations by Guangfan Jiao in Semiconductor Technology
Introduction
Guangfan Jiao is a notable inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor devices, holding a total of three patents. His work focuses on enhancing the electrical characteristics of semiconductor devices, which are crucial for modern electronics.
Latest Patents
Guangfan Jiao's latest patents involve advanced semiconductor devices. These devices may include a substrate, an interface insulation pattern, a gate insulation pattern, a threshold voltage controlling metal pattern, and a conductive pattern. The interface insulation pattern is formed on the substrate, while the gate insulation pattern includes an oxide with a dielectric constant higher than that of silicon oxide. The threshold voltage controlling metal pattern is formed on the gate insulation pattern, and the conductive pattern is formed on the threshold voltage controlling metal pattern. Notably, first dopants, including at least fluorine, are included within and at least one surface of the gate insulation pattern and at the upper surface of an interface insulation pattern that contacts the gate insulation pattern. This innovative design allows the semiconductor device to exhibit excellent electrical characteristics.
Career Highlights
Guangfan Jiao is currently employed at Samsung Electronics Co., Ltd., a leading company in the electronics industry. His work at Samsung has allowed him to contribute to cutting-edge technology in semiconductor devices, further establishing his reputation as an inventor in this field.
Collaborations
Some of Guangfan Jiao's coworkers include Hokyun An and Bumsoo Kim. Their collaboration in the field of semiconductor technology has likely contributed to the advancements in their respective projects.
Conclusion
Guangfan Jiao's innovative work in semiconductor devices showcases his expertise and commitment to advancing technology. His patents reflect significant improvements in electrical characteristics, which are essential for the future of electronics.