Singapore, Singapore

Guang Xin Ni

This inventor holds 2 USPTO granted patents and 1 published patent application and 2 EPO patents. Top assignee: National University of Singapore. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Guang Xin Ni. Retrieved from https://idiyas.com/inventor/guang-xin-ni

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2015

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2 patents (USPTO):Explore Patents

Title: Innovations by Guang Xin Ni: Pioneering Research in Graphene Technologies

Introduction

Guang Xin Ni is a prominent inventor based in Singapore, known for his significant contributions to the field of photonics and plasmonics. With a focus on advanced materials, he has developed innovative technologies that leverage the unique properties of graphene. His work has implications for various applications, including ultra-fast laser systems and quantum devices.

Latest Patents

Guang Xin Ni holds 2 patents, showcasing his inventive prowess. His latest patents include:

1. **Gate-tunable graphene-ferroelectric hybrid structure for photonics and plasmonics**: This invention relates to a novel type of gate-tunable photonics and plasmonics that utilizes doped large-scale graphene coupled with ferroelectric material. The graphene-ferroelectric hybrid structure paves the way for the realization of ultra-fast, low power consumption, and multi-wavelength operation saturable absorbers for applications in ultra-fast laser systems and novel types of plasmonics for applications in infrared detection, single-photon quantum devices, and ultrasensitive detectors.

2. **Transparent conductor**: This patent describes a transparent conductor comprising a graphene layer and a permanent dipole layer on the graphene layer, which is configured to electrostatically dope the graphene layer.

Career Highlights

Guang Xin Ni is affiliated with the National University of Singapore, where he conducts his research and development activities. His work has garnered attention in the scientific community, contributing to advancements in material science and engineering.

Collaborations

Guang Xin Ni has collaborated with notable researchers, including Yi Zheng and Barbaros Özyilmaz, enhancing the scope and impact of his work through teamwork and shared expertise.

Conclusion

Guang Xin Ni's innovative contributions to graphene technologies exemplify the potential of advanced materials in modern applications. His patents reflect a commitment to pushing the boundaries of science and technology, paving the way for future advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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