The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Jun. 06, 2013
Applicant:
National University of Singapore, Singapore, SG;
Inventors:
Assignee:
National University of Singapore, Singapore, SG;
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/11 (2006.01); H01S 3/067 (2006.01); H01S 3/094 (2006.01); G02F 1/35 (2006.01); C23C 16/04 (2006.01); C23C 16/26 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
H01S 3/1115 (2013.01); C23C 16/04 (2013.01); C23C 16/26 (2013.01); C23C 16/44 (2013.01); G02F 1/3523 (2013.01); H01S 3/067 (2013.01); H01S 3/06791 (2013.01); H01S 3/094046 (2013.01);
Abstract
The invention relates to a novel type of gate-tunable photonics and plasmonics which utilizes doped large-scale graphene coupled with ferroelectric material. The graphene-ferroelectric hybrid structure paves the way for the realization of ultra-fast, low power consumption and multi-wavelength operation saturable absorbers for applications in ultra-fast laser systems and novel types of plasmonics for applications in infrared detection, single-photon quantum devices and ultrasensitive detectors.