Company Filing History:
Years Active: 2025
Title: Innovations of Gregory P McNerney
Introduction
Gregory P McNerney is an accomplished inventor based in Beaverton, Oregon. He is known for his significant contributions to the field of semiconductor technology, particularly in the development of gallium nitride-based transistors. His innovative work has led to advancements that enhance the performance and efficiency of electronic devices.
Latest Patents
One of Gregory P McNerney's notable patents is titled "Gate structures to enable lower subthreshold slope in gallium nitride-based transistors." This patent describes a transistor that includes a substrate, a buffer layer, a channel layer, and one or more polarization layers. The polarization layers consist of a group III-N material that incorporates both a first and a second group III constituent. The design also features multiple p-type doped layers, each with a varying proportion of the group III constituents, which contribute to the transistor's improved performance.
Career Highlights
Gregory P McNerney is currently employed at Intel Corporation, a leading technology company renowned for its innovations in computing and semiconductor manufacturing. His work at Intel has positioned him as a key player in the advancement of next-generation electronic components.
Collaborations
Throughout his career, Gregory has collaborated with talented individuals such as Sanyam Bajaj and Michael S Beumer. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.
Conclusion
Gregory P McNerney's contributions to the field of semiconductor technology exemplify the spirit of innovation. His work continues to influence the development of efficient electronic devices, showcasing the importance of research and collaboration in driving technological advancements.