Gregg Higashi

Title: Gregg Higashi: Innovator in Epitaxial Growth and Optoelectronic Devices

Introduction:

Gregg Higashi is a renowned inventor based in San Jose, CA, known for his significant contributions to the field of epitaxial growth and optoelectronic devices. With an impressive portfolio of 38 patents, Higashi has made remarkable advancements in the deposition process and the development of multi-junction optoelectronic devices. Let's delve into his latest patents, career highlights, collaborations, and all that makes his work truly remarkable.

Latest Patents:

Higashi's recent patents include groundbreaking methods for high growth rate deposition to form various cells on a wafer. These patents focus on epitaxial growth of Group III/V materials at exceptional rates, ranging from 30 μm/hr to 90-120 μm/hr. These materials find applications in solar, semiconductor, and other electronic devices. The process involves the formation of thin films of epitaxially grown layers, including gallium arsenide, gallium aluminum arsenide, gallium indium arsenide, and their derivatives and alloys. Additionally, Higashi's research covers multi-junction optoelectronic devices with enhanced efficiency through photon recycling and the implementation of optical filters.

Career Highlights:

Over the years, Gregg Higashi has made significant contributions to the field of epitaxial growth and optoelectronic devices. Working for companies like Alta Devices, Inc. and Utica Leaseco, LLC, Higashi has been at the forefront of innovation. He has achieved substantial breakthroughs in deposition processes, enabling the growth of Group III/V materials at unprecedented rates. His pioneering work in multi-junction optoelectronic devices has advanced the efficiency and performance of these devices. Higashi's contributions continue to shape the landscape of semiconductor and solar technologies.

Collaborations:

Throughout his career, Higashi has worked alongside esteemed colleagues, further fueling his innovative spirit. Notable collaborators include Gang He and Andreas G. Hegedus, who have played crucial roles in the development and refinement of his inventions. These collaborative efforts have resulted in groundbreaking advancements in epitaxial growth and optoelectronic devices.

Conclusion:

Gregg Higashi's remarkable progress in epitaxial growth processes and optoelectronic devices has left an indelible mark on the industry. With numerous patents to his name, his innovative achievements have elevated the efficiency and quality of various electronic devices. Higashi's collaborations and career highlights illustrate his commitment to pushing boundaries and driving advancements in the realm of semiconductor technologies. As an esteemed inventor, he continues to contribute to the evolution of epitaxial deposition techniques and the development of cutting-edge optoelectronic devices, furthering the advancement of the industry as a whole.