The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2017

Filed:

Sep. 18, 2015
Applicant:

Alta Devices, Inc., Santa Clara, CA (US);

Inventors:

Linlin Yang, Sunnyvale, CA (US);

Gang He, Sunnyvale, CA (US);

Dan Patterson, Sunnyvale, CA (US);

Paul Goddu, Morgan Hill, CA (US);

Liguang Lan, Sunnyvale, CA (US);

Gregg Higashi, San Jose, CA (US);

Assignee:

ALTA DEVICES, INC., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/05 (2014.01);
U.S. Cl.
CPC ...
H01L 31/0508 (2013.01); H01L 31/05 (2013.01);
Abstract

System and method of providing a photovoltaic (PV) cell with a complex via structure in the substrate that has a primary via for containing a conductive material and an overflow capture region for capturing an overflow of the conductive material from the primary via. The conductive filling in the primary via may serve as an electrical contact between the PV cell and another PV cell. The overflow capture region includes one or more recesses formed on the substrate back surface. When the conductive material overflows from the primary via, the one or more recesses can capture and confine the overflow within the boundary of the complex via structure. A recess may be a rectangular or circular trench proximate to or overlaying the primary via. The recesses may also be depressions formed by roughening the substrate back surface.


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