Greg Fung

Title: Innovations by Greg Fung in ESD Protection Technology

Introduction

Greg Fung is an accomplished inventor based in Fremont, CA. He has made significant contributions to the field of electronics, particularly in the area of electrostatic discharge (ESD) protection. His innovative approach combines advanced semiconductor technology with practical applications, showcasing his expertise in the industry.

Latest Patents

One of Greg Fung's notable patents is titled "ESD protection structure with SiGe BJT devices." This invention provides an ESD protection device that utilizes the high conductivity of a heavily doped heterojunction base of a standard SiGe bipolar junction transistor (BJT) cell. The improved ESD protection scheme employs trench isolation and a buried subcollector layer of the SiGe BJT to confine ESD current. This design minimizes parasitic substrate leakage and achieves large forward voltages while imposing minimal parasitic capacitive loads on a protected active device. The structure can be fabricated using existing SiGe BiCMOS fabrication processes without additional processing steps, leveraging characterization data already available for SiGe BJTs to model the performance of the ESD protection devices.

Career Highlights

Greg Fung is currently associated with WJ Communications, Inc., where he continues to develop innovative solutions in the field of semiconductor technology. His work has been instrumental in advancing ESD protection mechanisms, which are critical for the reliability of electronic devices.

Collaborations

Due to space constraints, the collaborations section will be omitted.

Conclusion

Greg Fung's contributions to ESD protection technology exemplify the intersection of innovation and practical application in the semiconductor industry. His work not only enhances device reliability but also showcases the potential of SiGe technology in modern electronics.