Location History:
- Woodbury, MN (US) (2010)
- Shanghai, CN (2012)
Company Filing History:
Years Active: 2010-2012
Title: Grace L Ho: Innovator in Electronic Device Fabrication
Introduction
Grace L Ho is a prominent inventor based in Shanghai, China. She has made significant contributions to the field of electronic device fabrication, holding 2 patents that showcase her innovative approaches. Her work focuses on methods for forming gate structures and fabricating thin film transistors, which are essential in modern electronics.
Latest Patents
Grace L Ho's latest patents include a method for forming gate structures. This process involves a web that comprises a substrate, a plurality of conductive elements, and a conductive anodization bus. The web is moved through an anodization station to create gate structures with dielectrics adjacent to gate electrodes. Additionally, she has developed a method of fabricating thin film transistors. This method includes forming an anodized layer and an electrically conductive layer, followed by selective removal to achieve the desired thickness.
Career Highlights
Grace L Ho is associated with 3M Innovative Properties Company, where she applies her expertise in electronic device fabrication. Her innovative methods have the potential to enhance the efficiency and performance of electronic devices, making her a valuable asset in her field.
Collaborations
Some of her notable coworkers include Michael W Bench and Steven D Theiss, who contribute to the collaborative environment that fosters innovation at 3M.
Conclusion
Grace L Ho is a trailblazer in the field of electronic device fabrication, with her patents reflecting her commitment to innovation. Her work continues to influence the development of advanced electronic technologies.