3m Innovative Properties Company

Grace L Ho

Michael W Bench

Michael Albert Haase

Donald J McClure

Steven D Theiss

Jeffrey H Tokie

Robert J Schubert

Donald J Mcclure

A process for forming gate structures is described. A web comprises a substrate, a plurality of conductive elements disposed on the substrate, and a conductive anodization bus. The web is moved through an anodization station to form a plurality of gate structures comprising a plurality of gate dielectrics adjacent to a plurality of gate electrodes. A process for forming electronic devices further providing a semiconductor, a source electrode, and a drain electrode is described.

Method for forming gate structures

Method of fabricating electronic devices is disclosed. The method includes the steps of forming an anodized layer that has a thickness greater than a desired thickness, and forming an electrically conductive layer on the anodized layer. The method further includes the steps of removing the conductive layer in a selected area to expose the anodized layer, and removing the exposed anodized layer until the anodized layer in the exposed area has the desired thickness.

Method of fabricating thin film transistor

Growing community of inventors

Shanghai, China

Grace L Ho