Williston, VT, United States of America

Gordon M Babson

This inventor holds 3 USPTO granted patents. Top assignee: International Business Machines Corporation. Active years: 1998-2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gordon M Babson. Retrieved from https://idiyas.com/inventor/gordon-m-babson

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.6

ph-index = 3

Forward Citations = 31(Granted Patents)


Company Filing History:


Years Active: 1998-2002

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3 patents (USPTO):Explore Patents

Title: Gordon M Babson: Innovator in Semiconductor Probes and Memory Technologies

Introduction

Gordon M Babson is a notable inventor based in Williston, VT (US). He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work primarily focuses on the development of advanced probes and memory fabrication methods.

Latest Patents

One of Babson's latest patents is titled "Micro probe and method of fabricating same." This invention describes a monolithic probe that features an integral fine probe point, pressure spring, conductive line, and connector for testing semiconductor devices. The integration of a serpentine spring into the probe body enhances contact reliability and reduces breakage. The patent also details various types of probes, including standard, coaxial, triaxial, and Kelvin probes, which can be fabricated to very small dimensions using standard semiconductor processes.

Another significant patent by Babson is the "ROM storage cell and method of fabrication." This invention outlines a process and structure for a programmable array used in read-only memory, which comprises diode elements and shorted diode elements. The elements are interconnected across bit and wordlines, utilizing lateral polysilicon diodes and a metal silicide layer to bridge the junction of selected diodes. The programming process involves either forming or removing the silicide layer from the junctions of pre-selected diodes.

Career Highlights

Gordon M Babson is associated with the International Business Machines Corporation (IBM), where he has contributed to various innovative projects. His expertise in semiconductor technology has positioned him as a key figure in the development of advanced electronic components.

Collaborations

Throughout his career, Babson has worked alongside notable colleagues, including Richard James Evans and Robert J Finch. Their collaborative efforts have furthered advancements in the field of semiconductor technology.

Conclusion

Gordon M Babson's contributions to semiconductor probes and memory technologies have made a lasting impact on the industry. His innovative patents reflect his commitment to enhancing the reliability and efficiency of electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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