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For the Inventor, By the Inventor

Santa Ana, CA, United States of America

Gordon C Godejahn, Jr

This inventor holds 8 USPTO granted patents. Top assignee: Rockwell International Corporation. Active years: 1980-1986.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gordon C Godejahn, Jr. Retrieved from https://idiyas.com/inventor/gordon-c-godejahn-jr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 8

% Patents Active = 100.0

Average Co-Inventor Count = 1.2

ph-index = 8

Forward Citations = 214(Granted Patents)


Company Filing History:

goldMedal8 out of 3,430 
 
Rockwell International Corporation
 patents

Years Active: 1980-1986

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8 patents (USPTO):Explore Patents
1. 4587711 - Process for high density VLSI circuits, having self-aligned gates and (1986-05-13),
2. 4506437 - Process for and structure of high density VLSI circuits, having (1985-03-26),
3. 4477962 - Process for and structure of high density VLSI circuits, having (1984-10-23),
4. 4455737 - Process for and structure of high density VLSI circuits, having (1984-06-26),
5. 4277881 - Process for fabrication of high density VLSI circuits, having (1981-07-14),
6. 4221045 - Self-aligned contacts in an ion implanted VLSI circuit (1980-09-09),
7. 4221044 - Self-alignment of gate contacts at local or remote sites (1980-09-09),
8. 4192059 - Process for and structure of high density VLSI circuits, having (1980-03-11),

Title: The Innovations of Gordon C Godejahn, Jr.

Introduction

Gordon C Godejahn, Jr. is a notable inventor based in Santa Ana, California. He has made significant contributions to the field of very large scale integrated (VLSI) circuits. With a total of eight patents to his name, Godejahn has played a crucial role in advancing technology in this area.

Latest Patents

Godejahn's latest patents include a process for high density VLSI circuits, which features self-aligned gates. This innovative process employs techniques that enhance the production of VLSI circuits by utilizing self-aligned gates and contacts for field-effect transistor (FET) devices. The method allows for both diffused conducting lines in the substrate and polysilicon conducting lines situated on isolating field oxide. The increased mask alignment tolerances are rendered non-critical, which is a significant advancement. The use of materials with different etch characteristics enables selective oxidation of desired portions of the structure without the need for masking. This results in VLSI circuits that exhibit increased density and reliability.

Career Highlights

Godejahn has had a distinguished career at Rockwell International Corporation, where he has contributed to various projects and innovations. His work has been instrumental in the development of advanced VLSI technologies that have had a lasting impact on the industry.

Collaborations

Throughout his career, Godejahn has collaborated with notable colleagues such as Gary L Heimbigner and Mahboob Khan. These collaborations have further enriched his work and contributed to the success of the projects he has been involved in.

Conclusion

Gordon C Godejahn, Jr. is a prominent figure in the field of VLSI circuit innovation. His patents and contributions have significantly advanced the technology, making him a key inventor in this domain. His work continues to influence the future of integrated circuit design and production.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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