This inventor holds 2 USPTO granted patents. Top assignee: Texas Instruments Corporation. Active years: 1978-1987.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- Sugarland, TX (US) (1978)
- Lewisville, TX (US) (1987)
Company Filing History:
Years Active: 1978-1987
Title: Glen G Possley: Innovator in Semiconductor Technology
Introduction
Glen G Possley is a notable inventor based in Sugarland, TX (US). He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work has had a lasting impact on the development of programmable memory elements and semiconductor fabrication methods.
Latest Patents
One of Glen G Possley's latest patents is for a programmable read-only-memory element with a polycrystalline silicon layer. This invention describes a PROM element that utilizes an N-type epitaxial layer grown on a P-type substrate, featuring a P-type anode region and an N-type poly-silicon layer. The innovative design allows for programming the memory element by applying a positive potential to the metal layer, which facilitates the breakdown of the barrier between the cathode and anode regions.
Another significant patent is the self-aligned epitaxial method for the fabrication of semiconductors. This method involves selectively doping a semiconductor substrate to create discrete regions of opposite conductivity types, followed by selective epitaxial growth. The result is a self-aligned epitaxial structure that can be processed further to produce a variety of semiconductor devices.
Career Highlights
Glen G Possley has had a distinguished career at Texas Instruments Corporation, where he has been instrumental in advancing semiconductor technologies. His innovative approaches have contributed to the company's reputation as a leader in the electronics industry.
Collaborations
Throughout his career, Glen has collaborated with notable colleagues, including Robert G Massey and Billy B Williams. These partnerships have fostered an environment of innovation and creativity, leading to the development of groundbreaking technologies.
Conclusion
Glen G Possley is a prominent figure in the field of semiconductor technology, with a focus on programmable memory and fabrication methods. His contributions continue to influence the industry and inspire future innovations.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
