The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 1978
Filed:
Oct. 26, 1976
Applicant:
Inventors:
Glen G Possley, Sugarland, TX (US);
Robert G Massey, Sherman, TX (US);
Billy B Williams, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148175 ; 2957 / ; 2957 / ; 2957 / ; 29570 ; 148187 ; 357 50 ; 357 52 ;
Abstract
In the fabrication of semiconductor devices, a method is provided which includes the steps of selectively doping a semiconductor substrate of one conductivity type to form therein discrete regions of opposite conductivity type, followed by selective epitaxial growth to fill the windows of the diffusion mask, whereby the epitaxially grown regions are inherently characterized by exact alignment with the doped regions. The self-aligned epitaxial structure is then subjected to further processing in accordance with numerous alternate schemes to provide a wide variety of devices.