Suwon-si, South Korea

Gilyoung Kang

USPTO Granted Patents = 4 

Average Co-Inventor Count = 5.5

ph-index = 1


Company Filing History:


Years Active: 2024-2025

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4 patents (USPTO):Explore Patents

Title: Gilyoung Kang: Innovator in Memory Device Technology

Introduction

Gilyoung Kang is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of memory devices, holding a total of 4 patents. His work focuses on enhancing the functionality and efficiency of memory systems, which are crucial in modern computing.

Latest Patents

Kang's latest patents include innovative designs for memory devices and their operating methods. One notable patent describes a memory device that incorporates a decoder group to decode multiple codewords into data patterns. This device also features a memory cell array for storing these data patterns and an encoder that converts the data back into codewords. Additionally, the decoder group is designed to handle illegal codewords, converting them into fixed patterns for improved reliability. Another significant patent involves a semiconductor memory device equipped with an on-die error correction code (ECC) engine. This device is capable of performing ECC decoding and providing external devices with signals indicating the correctness of test data.

Career Highlights

Gilyoung Kang is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to push the boundaries of memory technology, contributing to advancements that benefit a wide range of applications in electronics.

Collaborations

Kang has collaborated with notable colleagues, including Sungrae Kim and Hyeran Kim. These partnerships have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Gilyoung Kang's contributions to memory device technology exemplify the spirit of innovation in the tech industry. His patents reflect a commitment to improving the efficiency and reliability of memory systems, making a lasting impact on the field.

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