Samsung Electronics Co., Ltd.

Gilyoung Kang

Sungrae Kim

Hyeran Kim

Chisung Oh

Yujung Song

Changkyu Seol

Wonyoung Choi

SungYong Cho

Jeongseok Park

Minho Maeing

A memory device, an operating method of the memory device, and a test system including the memory device. The memory device may include a decoder group configured to receive a plurality of codewords including a plurality of symbols from outside of the memory device and to decode the plurality of codewords into data patterns, a memory cell array configured to store the data patterns received from the decoder group and including a plurality of memory cells, and an encoder configured to encode the data patterns into the plurality of codewords including the plurality of symbols. The plurality of codewords may include illegal codewords and normal codewords, and the decoder group may be further configured to convert the illegal codewords among the plurality of codewords into fixed patterns, and the encoder may be configured to output the plurality of codewords to the outside of the memory device.

Memory devices, operating methods of the memory devices, and test systems including the memory devices

A semiconductor memory device includes a memory cell array, an on-die error correction code (ECC) engine and a control logic circuit. The on-die ECC engine includes a first latch and a second latch. The control logic circuit sets the semiconductor memory device to a test mode in response to a first mode register set command. The on-die ECC engine, in the test mode, cuts off a connection with the memory cell array, receives a test data, stores the test data in the first latch, performs an ECC decoding on the test data stored in the first latch and a test parity data, stored in the second latch in response to a read command and provides an external device with a severity signal indicating whether the test data and the test parity data includes at least one error bit and the at least one error bit is correctable.

Semiconductor memory device including an on-die ECC engine

A memory system includes a host system having a memory controller therein, which is configured to generate a command address signal. The memory controller includes a first bit signal generator configured to generate a data signal as a plurality of data bits, a second bit signal generator configured to generate a command address bus inversion bit (CABIB) having a high or low logic level that is a function of a number of data bits within the data signal having a predetermined logic level, and a parity bit generator configured to set a parity signal to a first logic level when a total number of data bits within the data signal and the CABIB having a high logic level is an even number. A storage system is also provided, which is configured to write or read data in response to the command address signal received from the host system. The memory controller is configured to set the CABIB to a high logic level when: (i) 'n', which is a number of bits included in the command address signal, is a positive integer greater than one, and (ii) a number of data bits within the data signal having a low logic level is greater than or equal to (n/2)−1.

Memory systems and controllers for generating a command address and methods of operating same

A semiconductor memory device includes a memory cell array and an on-die error correction code (ECC) engine. The on-die ECC engine, during a write operation, generates a second main data by encoding a first main data with a random binary code, performs an ECC encoding on the second main data to generate a parity data and stores the second main data and the parity data in a target page in the memory cell array. The on-die ECC engine, during a read operation, reads the second main data and the parity data from the target page, performs an ECC decoding on the second main data based on the parity data to generate a syndrome in parallel with generating the first main data by encoding the second main data with the random binary code and corrects at least one error bit in the first main data based on the syndrome.

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Suwon-si, South Korea

Gilyoung Kang