Gi Seong Ryu

Title: Gi Seong Ryu: Innovator in Organic Thin Film Transistors

Introduction

Gi Seong Ryu is a prominent inventor based in Busan, South Korea. He has made significant contributions to the field of organic electronics, particularly in the development of low-voltage organic thin film transistors (OTFTs). His innovative work has the potential to advance the efficiency and applicability of electronic devices.

Latest Patents

Gi Seong Ryu holds a patent for a "Low-voltage organic thin film transistor and fabrication method thereof." This invention provides an OTFT that operates at low voltage, featuring a gate dielectric layer made of ultra-thin metal oxide or a dual gate dielectric layer of metal oxide and organic dielectric. The metal oxide layer is self-grown to a thickness of less than 10 nm through the direct oxidation of a metal gate electrode in an Oplasma process at temperatures below 100°C. The design allows for the deposition of the gate electrode on a plastic or glass substrate, with an organic semiconductor layer placed on the gate dielectric layer. The source/drain electrodes can be positioned under the organic semiconductor layer when using the dual gate dielectric layer, enabling a bottom contact structure.

Career Highlights

Gi Seong Ryu is affiliated with the Dong-a University Research Foundation for Industry-Academy Cooperation. His work at this institution emphasizes collaboration between academia and industry, fostering innovation and practical applications of research findings.

Collaborations

Gi Seong Ryu has collaborated with notable colleagues, including Jae Woo Yang and Chung Kun Song. Their joint efforts contribute to the advancement of research in organic electronics and related fields.

Conclusion

Gi Seong Ryu's contributions to the field of organic thin film transistors highlight his innovative spirit and dedication to advancing technology. His patent for a low-voltage OTFT represents a significant step forward in the development of efficient electronic devices.