The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2010
Filed:
Apr. 05, 2007
Jae Woo Yang, Daejun, KR;
Chung Kun Song, Busan, KR;
Kang Dae Kim, Busan, KR;
Gi Seong Ryu, Busan, KR;
Yong Xian Xu, Busan, KR;
Myung Won Lee, Busan, KR;
Jae Woo Yang, Daejun, KR;
Chung Kun Song, Busan, KR;
Kang Dae Kim, Busan, KR;
Gi Seong Ryu, Busan, KR;
Yong Xian Xu, Busan, KR;
Myung Won Lee, Busan, KR;
Abstract
The present invention provides an organic thin film transistor (OTFT) being operatable at a low-voltage. The OTFT has a gate dielectric layer of ultra-thin metal oxide or a dual gate dielectric layer of metal oxide and organic dielectric. The metal oxide layer is self-grown to a thickness lower than 10 nm by direct oxidation of a metal gate electrode in Oplasma process at a temperature lower than 100° C. The gate electrode is deposited with pattern on a plastic or glass substrate. An organic semiconductor layer is deposited on the gate dielectric layer, and source/drain electrodes are formed thereon. In case the dual gate dielectric layer is used, the source/drain electrodes can be disposed under the organic semiconductor layer to realize a bottom contact structure.