Dong-A University Research Foundation for Industry-Academy Cooperation

Gi Seong Ryu

Jae Woo Yang

Chung Kun Song

Myung Won Lee

Kang Dae Kim

Yong Xian Xu

The present invention provides an organic thin film transistor (OTFT) being operatable at a low-voltage. The OTFT has a gate dielectric layer of ultra-thin metal oxide or a dual gate dielectric layer of metal oxide and organic dielectric. The metal oxide layer is self-grown to a thickness lower than 10 nm by direct oxidation of a metal gate electrode in Oplasma process at a temperature lower than 100&#xb0; C. The gate electrode is deposited with pattern on a plastic or glass substrate. An organic semiconductor layer is deposited on the gate dielectric layer, and source/drain electrodes are formed thereon. In case the dual gate dielectric layer is used, the source/drain electrodes can be disposed under the organic semiconductor layer to realize a bottom contact structure.

Growing community of inventors

Busan, South Korea

Gi Seong Ryu