Suwon-si, South Korea

Geun Won Lim

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Geun Won Lim. Retrieved from https://idiyas.com/inventor/geun-won-lim-rpbkn3qx

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Geun Won Lim and Semiconductor Memory Technology

Introduction

Geun Won Lim is an inventor based in Suwon-si, South Korea. His patent work concerns semiconductor memory devices and electronic systems, and he is associated with Samsung Electronics Ltd. Lim is credited with 1 patent in the information provided.

Latest Patents

Lim’s listed patent is “Semiconductor Memory Devices and Electronic Systems Including the Same.” It describes a semiconductor memory device built on a substrate, with a mold structure and multiple channel structures extending through it. The design also includes a source layer, a spaced-apart source sacrificial layer, and a source support layer positioned between them. The support layer has upper-surface portions at different vertical distances relative to the source layer and substrate.

Career Highlights

The available information identifies Lim’s work in semiconductor memory technology and his association with Samsung Electronics Ltd. His listed patent focuses on structural features of a memory device, including the arrangement of its source and support layers.

Collaborations

Beyong Hyun Koh and Ho Jin Kim are identified as Lim’s coworkers. The information provided does not specify their roles in the listed patent or describe particular collaborative projects.

Conclusion

Geun Won Lim’s listed invention addresses the structure of semiconductor memory devices, reflecting his connection to memory technology and Samsung Electronics Ltd.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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