Anseong, South Korea

Geun Sik Yoon

This inventor holds 1 USPTO granted patent. Top assignee: K. C. Tech Co., Ltd.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Geun Sik Yoon. Retrieved from https://idiyas.com/inventor/geun-sik-yoon

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Geun Sik Yoon: Innovator in Substrate Processing Technology

Introduction

Geun Sik Yoon is a notable inventor based in Anseong, South Korea. He has made significant contributions to the field of substrate processing technology. His innovative approach has led to the development of advanced apparatuses that enhance the efficiency of substrate cleaning processes.

Latest Patents

Geun Sik Yoon holds a patent for a "Substrate treating apparatus and cleaning nozzle used therein." This invention discloses a substrate processing apparatus that includes a support for holding a disk-shaped substrate. It features a cleaning nozzle designed to spray a mixed fluid, combining liquid and gas, onto the substrate's surface through a slit-shaped discharge port. This innovative design effectively removes foreign substances from the substrate, improving the mixing uniformity of the cleaning fluid.

Career Highlights

Geun Sik Yoon is currently associated with K. C. Tech Co., Ltd., where he continues to develop and refine technologies related to substrate processing. His work has been instrumental in advancing the capabilities of cleaning apparatuses used in various industrial applications.

Conclusion

Geun Sik Yoon's contributions to substrate processing technology exemplify the impact of innovative thinking in engineering. His patent reflects a commitment to improving industrial processes, showcasing the importance of invention in modern technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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