Gerhard Hobler

Title: Gerhard Hobler: Innovator in Monolithically-Integrated SRAM Technology

Introduction

Gerhard Hobler is a notable inventor based in Klosterneuburg, Austria. He has made significant contributions to the field of semiconductor technology, particularly in the development of monolithically-integrated static random access memory (SRAM) devices. His innovative approach has led to advancements that enhance the efficiency and size of SRAM cells.

Latest Patents

Gerhard Hobler holds a patent for a monolithically-integrated SRAM cell. This invention focuses on reducing the cell size by integrating at least two transistors within the SRAM cell. In this design, the drain of the first transistor serves as the gate of the second transistor, while the drain of the second transistor functions as the gate of the first transistor. This innovative integration eliminates the need for gate-to-drain connections that were required in previous devices, thereby streamlining the design and improving performance.

Career Highlights

Throughout his career, Gerhard Hobler has been associated with Lucent Technologies Inc., where he has contributed to various projects and innovations in semiconductor technology. His work has been instrumental in advancing the capabilities of memory devices, making them more compact and efficient.

Collaborations

Gerhard has collaborated with several talented individuals in his field, including Marco Mastrapasqua and Mark Richard Pinto. These collaborations have fostered an environment of innovation and have led to the development of cutting-edge technologies in the semiconductor industry.

Conclusion

Gerhard Hobler's contributions to the field of SRAM technology exemplify the impact of innovative thinking in the semiconductor industry. His patent for a monolithically-integrated SRAM cell showcases his commitment to advancing technology and improving device efficiency.