The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2000
Filed:
May. 13, 1999
Applicant:
Inventors:
Gerhard Hobler, Klosterneuburg, AT;
Marco Mastrapasqua, Annandale, NJ (US);
Mark Richard Pinto, Summit, NJ (US);
Enrico Sangiori, Forli, IT;
Assignee:
Lucent Technologies Inc., Murray Hill, NJ (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257347 ; 257350 ; 257351 ; 257354 ; 257369 ;
Abstract
A monolithically-integrated SRAM cell is described for reducing the cell size, i.e., at least two of a plurality of transistors comprising the SRAM cell are monolithically integrated to define a first transistor and a second transistor, wherein the drain of the first transistor functions as the gate of the second transistor and the drain of the second transistor functions as the gate of the first transistor. This integration eliminates the need for gate-to-drain connections of previous devices.