Enrico Sangiori

Title: Enrico Sangiori: Innovator in Monolithically-Integrated SRAM Technology

Introduction

Enrico Sangiori is a notable inventor based in Forli, Italy. He has made significant contributions to the field of semiconductor technology, particularly in the development of monolithically-integrated static random access memory (SRAM) devices. His innovative approach has paved the way for advancements in memory cell design.

Latest Patents

Sangiori holds a patent for a monolithically-integrated SRAM cell. This invention focuses on reducing the cell size by integrating at least two transistors within the SRAM cell. In this design, the drain of the first transistor serves as the gate of the second transistor, while the drain of the second transistor functions as the gate of the first transistor. This integration effectively eliminates the need for gate-to-drain connections that were required in previous devices.

Career Highlights

Enrico Sangiori is associated with Lucent Technologies Inc., where he has contributed to various projects in semiconductor technology. His work has been instrumental in enhancing the efficiency and performance of memory devices.

Collaborations

Sangiori has collaborated with notable colleagues such as Gerhard Hobler and Marco Mastrapasqua. Their combined expertise has fostered innovation in the field of integrated circuits and memory technology.

Conclusion

Enrico Sangiori's contributions to the development of monolithically-integrated SRAM technology highlight his role as a key innovator in the semiconductor industry. His work continues to influence advancements in memory device design and functionality.