Branchburg, NJ, United States of America

Gerard Edward Mahoney

This inventor holds 3 USPTO granted patents. Top assignee: Bell Telephone Laboratories. Active years: 1978-1980.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gerard Edward Mahoney. Retrieved from https://idiyas.com/inventor/gerard-edward-mahoney

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.8

ph-index = 3

Forward Citations = 66(Granted Patents)


Company Filing History:


Years Active: 1978-1980

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3 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Gerard Edward Mahoney

Introduction

Gerard Edward Mahoney is a notable inventor based in Branchburg, NJ (US). He has made significant contributions to the field of semiconductor device fabrication, holding a total of 3 patents. His work has advanced the techniques used in the manufacturing of electronic components, particularly in the area of metallization.

Latest Patents

One of Mahoney's latest patents is titled "Process useful in the fabrication of articles with metallized surfaces." This innovative method involves metallizing a specific area on a substrate during the production of semiconductor devices. The process includes depositing a polymer resist on the substrate to define the area to be metallized. A suitable metal is then deposited onto the coated substrate, creating a metallic film on both the exposed area and the delineating material. This film is subsequently removed from the delineating material using ion milling at an acute angle to the substrate's plane, followed by conventional techniques to eliminate the delineating material.

Another significant patent is the "Selective lift-off technique for fabricating GaAs FETs." This technique allows for the molecular beam epitaxy (MBE) growth of epitaxial layers on selected areas of a growth surface. Portions of the surface are masked with an amorphous material, directing molecular beams at the masked surface. This results in a polycrystalline layer depositing on the mask while an epi-layer grows in the unmasked zones. The mask material is then treated with an etchant to dissolve it, lifting off the polycrystalline layer and exposing the underlying surface. This process is applicable in the fabrication of FETs and opto-electronic devices, including double heterostructure junction lasers.

Career Highlights

Gerard Edward Mahoney has spent a significant part of his career at Bell Telephone Laboratories, where he has been instrumental in developing advanced semiconductor technologies. His innovative approaches have contributed to the evolution of electronic devices, making them more efficient and effective.

Collaborations

Throughout his career, Mahoney has collaborated with esteemed colleagues, including James Vincent DiLorenzo and Alfred Yi Cho. These partnerships have fostered a creative environment that has led to groundbreaking advancements in semiconductor technology.

Conclusion

Gerard Edward Mahoney's contributions to the field of semiconductor device fabrication are noteworthy. His innovative patents and collaborative efforts have significantly impacted the industry, paving the

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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