The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 1978
Filed:
May. 06, 1977
Alfred Yi Cho, Summit, NJ (US);
James Vincent DiLorenzo, Piscataway, NJ (US);
Gerard Edward Mahoney, Branchburg, NJ (US);
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Abstract
MBE growth of epitaxial layers on selected areas of a growth surface (e.g., wafer or epi-layer grown thereon) is achieved by masking portions of the surface with an amorphous material and directing molecular beams at the masked surface so that a polycrystalline layer deposits on the mask and an epi-layer grows in the unmasked zones. The mask material is then exposed to a suitable etchant effective to dissolve that material, lift-off the polycrystalline layer and expose the underlying surface. Self-aligned contacts can be fabricated by depositing a metal layer prior to etching. Subsequent lift-off removes both the polycrystalline layer and the overlying metal. This process can be utilized in the fabrication of FETs and opto-electronic devices such as double heterostructure junction lasers.