This inventor holds 1 USPTO granted patent. Top assignee: Intel Corporation. Active years: 1989.
Company Filing History:
Years Active: 1989
Title: Gerald Yin: Innovator in Plasma Etching Technology
Introduction
Gerald Yin is a notable inventor based in San Jose, California. He has made significant contributions to the field of semiconductor technology, particularly in the area of plasma etching processes for metal-oxide-semiconductor (MOS) devices. His innovative approach has led to advancements that enhance the quality and efficiency of semiconductor manufacturing.
Latest Patents
Gerald Yin holds a patent for a plasma etching process specifically designed for MOS circuit pregate etching. This method utilizes a multi-step power reduction plasma etching recipe to minimize ion bombardment damage on the surface of MOS devices. The process allows for a reasonable throughput of wafers, achieving a relatively high etch rate at the upper layers of the surface, followed by progressively lower power and etch rates at the lower levels. Additionally, the etching process is complemented by a cleaning procedure that effectively removes metallic contamination, resulting in an excellent surface for growing low defect density MOS gate oxides with high dielectric integrity. He has 1 patent to his name.
Career Highlights
Gerald Yin is currently employed at Intel Corporation, a leading company in semiconductor manufacturing. His work at Intel has positioned him at the forefront of technological advancements in the industry. His expertise in plasma etching has contributed to the development of more efficient and reliable semiconductor devices.
Collaborations
Throughout his career, Gerald has collaborated with esteemed colleagues such as Don W Jillie, Jr. and Glen N Wada. These collaborations have fostered an environment of innovation and have led to significant advancements in semiconductor technology.
Conclusion
Gerald Yin's contributions to plasma etching technology have made a lasting impact on the semiconductor industry. His innovative methods continue to enhance the manufacturing processes of MOS devices, ensuring high-quality outcomes in semiconductor production.