Helsinki, Finland

Georgi Popov

This inventor holds 1 USPTO granted patent. Top assignee: Asm IP Holding B.v.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Georgi Popov. Retrieved from https://idiyas.com/inventor/georgi-popov

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Georgi Popov: Innovator in Vapor Deposition Processes

Introduction

Georgi Popov is a notable inventor based in Helsinki, Finland. He has made significant contributions to the field of vapor deposition processes, particularly through his innovative methods and technologies.

Latest Patents

Georgi Popov holds a patent for "Vapor deposition processes and a deposition assembly." This patent describes a method for depositing a metal halide-comprising material on a substrate using a cyclic deposition process. The method involves providing a substrate in a reaction chamber, introducing a metal precursor in vapor phase, and adding a halogen precursor in vapor phase to form the desired material on the substrate. The metal precursor consists of a metal atom with an oxidation state of +1 that is bonded to an organic ligand. Additionally, the patent includes a deposition assembly designed for this process.

Career Highlights

Georgi Popov is associated with Asm IP Holding B.V., where he continues to develop and refine his innovative techniques in vapor deposition. His work has contributed to advancements in material science and engineering.

Collaborations

Georgi has collaborated with esteemed colleagues, including Alexander Weiss and Mikko Ritala, who share his passion for innovation in the field.

Conclusion

Georgi Popov's contributions to vapor deposition processes highlight his role as a key innovator in the industry. His patent and ongoing work at Asm IP Holding B.V. demonstrate his commitment to advancing technology in material deposition.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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