George W Arnold, Jr

Title: George W Arnold, Jr: Innovator in Ion Implant Technology

Introduction

George W Arnold, Jr. is a notable inventor based in Tijeras, NM (US). He has made significant contributions to the field of material etching through his innovative patent. His work focuses on enhancing the precision and effectiveness of ion implantation processes.

Latest Patents

Arnold holds a patent for a process titled "Controlled ion implant damage profile for etching." This invention involves etching materials such as LiNbO.sub.3 by implanting ions with varying kinetic energies in the targeted area. The method ensures that the implant damage is distributed uniformly throughout the depth of the zone to be etched, allowing for a tailored vertical profile of the damaged zone. This advancement has implications for improving the quality and efficiency of etching processes in various applications.

Career Highlights

Arnold's career is marked by his dedication to advancing ion implantation technology. He has worked with the United States of America as represented by the United States, contributing to research and development in this specialized field. His innovative approach has garnered attention and respect within the scientific community.

Collaborations

Some of Arnold's notable coworkers include Carol I Ashby and Paul J Brannon. Their collaborative efforts have likely contributed to the success of his projects and the advancement of technology in their field.

Conclusion

George W Arnold, Jr. is a distinguished inventor whose work in ion implant technology has paved the way for advancements in material etching processes. His patent reflects a commitment to innovation and precision in engineering.