The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 1990
Filed:
Aug. 18, 1988
Applicant:
Inventors:
George W Arnold, Jr, Tijeras, NM (US);
Carol I Ashby, Edgewood, NM (US);
Paul J Brannon, Albuquerque, NM (US);
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ; B05D / ;
U.S. Cl.
CPC ...
156628 ; 156643 ; 156667 ;
Abstract
A process for etching a material such as LiNbO.sub.3 by implanting ions having a plurality of different kinetic energies in an area to be etched, and then contacting the ion implanted area with an etchant. The various energies of the ions are selected to produce implant damage substantially uniformly throughout the entire depth of the zone to be etched, thus tailoring the vertical profile of the damaged zone.
Arnold, Jr, George. (1990). Controlled ion implant damage profile for etching (U.S. Patent No. 4978418). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4978418
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile