Carol I Ashby

This inventor holds 13 USPTO granted patents. Top assignees: The United States of America as Represented by the United States, Sandia Corporation. Active years: 1987-2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Carol I Ashby. Retrieved from https://idiyas.com/inventor/carol-i-ashby

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 13

% Patents Active = 100.0

Average Co-Inventor Count = 2.5

ph-index = 10

Forward Citations = 568(Granted Patents)

Company Filing History:

7 out of 3,975

The United States of America as Represented by the United States

Years Active: 1987-2003

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13 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6599362 - Cantilever epitaxial process (2003-07-29),

2. 6096656 - Formation of microchannels from low-temperature plasma-deposited silicon (2000-08-01),

3. 5814238 - Method for dry etching of transition metals (1998-09-29),

4. 5463649 - Monolithically integrated solid state laser and waveguide using spin-on (1995-10-31),

5. 5451542 - Surface passivation process of compound semiconductor material using UV (1995-09-19),

6. 5356516 - Process for etching mixed metal oxides (1994-10-18),

7. 5092957 - Carrier-lifetime-controlled selective etching process for semiconductors (1992-03-03),

8. 4978418 - Controlled ion implant damage profile for etching (1990-12-18),

9. 4965806 - Semiconductor laser devices having lateral refractive index tailoring (1990-10-23),

10. 4880493 - Electronic-carrier-controlled photochemical etching process in (1989-11-14),

11. 4838989 - Laser-driven fusion etching process (1989-06-13),

12. 4648938 - Composition/bandgap selective dry photochemical etching of semiconductor (1987-03-10),

13. 4648936 - Dopant type and/or concentration selective dry photochemical etching of (1987-03-10),

Title: The Innovative Contributions of Carol I Ashby

Introduction

Carol I Ashby is a prominent inventor based in Edgewood, NM (US), known for her significant contributions to the field of semiconductor technology. With a total of 13 patents to her name, Ashby has made remarkable advancements in processes that enhance material growth and microchannel formation.

Latest Patents

One of her latest patents is the "Cantilever epitaxial process," which describes a method for growing materials on a substrate without the need for masks or substrate removal during processing. This innovative technique allows for the production of semiconductor materials, such as GaN, with dislocation densities of less than 10 /cm. Another notable patent is the "Formation of microchannels from low-temperature plasma-deposited silicon," which outlines a process for creating fluid microchannels on a substrate. This method is compatible with integrated circuitry and has applications in chromatography, electrophoresis, and electrokinetic pumping.

Career Highlights

Throughout her career, Ashby has worked with esteemed organizations, including the United States of America as represented by the United States and Sandia Corporation. Her work has significantly impacted the semiconductor industry and advanced the understanding of material growth processes.

Collaborations

Ashby has collaborated with notable colleagues, including David R Myers and James L Dishman, contributing to various innovative projects and research initiatives.

Conclusion

Carol I Ashby is a trailblazer in the field of semiconductor technology, with her patents reflecting her dedication to innovation and excellence. Her work continues to influence the industry and inspire future advancements in material science.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]