Austin, TX, United States of America

George R Meyer


Average Co-Inventor Count = 1.2

ph-index = 4

Forward Citations = 42(Granted Patents)


Company Filing History:


Years Active: 1997-2001

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4 patents (USPTO):Explore Patents

Title: George R Meyer: Innovator in Semiconductor Technology

Introduction

George R Meyer is a notable inventor based in Austin, TX (US), recognized for his contributions to semiconductor technology. He holds a total of 4 patents, showcasing his innovative approach to enhancing semiconductor devices.

Latest Patents

Meyer’s latest patents include advancements in semiconductor devices featuring field isolation. One of his significant inventions describes a semiconductor device having field isolation with narrow and wide, planar field isolation regions. This technology involves forming trenches within a substrate, which define at least one mesa within the field isolation region. The trenches are filled with a material that is polished or etched to create the planar field isolation region. This method ensures minimal dishing occurs during the polishing process, as the widths of the trenches are kept relatively narrow, usually no more than five microns wide. Additionally, the mesas within these regions can form linguistic characters to better identify the part number or mask set of the device. This innovation can be crucial for certain types of input protection circuits or high potential components.

Career Highlights

George R Meyer has made significant strides in his career, particularly while working at Motorola Corporation. His work has contributed to the advancement of semiconductor technology, making him a valuable asset in the field.

Collaborations

Meyer has collaborated with notable coworkers, including Janos Farkas and Sanjit K Das, further enhancing the innovative environment in which he works.

Conclusion

George R Meyer is a distinguished inventor whose work in semiconductor technology has led to multiple patents and significant advancements in the field. His contributions continue to influence the development of innovative semiconductor devices.

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