The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2001
Filed:
Jul. 09, 1999
George R. Meyer, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
Narrow and wide, planar field isolation region (,) is formed by forming trenches (,) within a substrate (,). For wide, planar field isolation regions (,), the trenches (,) define at least one mesa (,) within the field isolation region (,). The trenches (,) are filled with a material (,) that is polished or etched to form the planar field isolation region (,) where the wide, planar field isolation regions (,) include the mesa(s) (,). Etching can be used or by polishing with minimal, if any, dishing occurs because the widths of the trenches (,) are kept relatively narrow (usually no more than five microns wide). Mesas (,) within a wide, planar field isolation region (,) can form linguistic characters to better identify the part number or mask set of the device. The planar field isolation region (,) can be formed near LOCOS-type field isolation regions when required for certain types of input protection circuits or high potential components.