Trabuco Canyon, CA, United States of America

George E Ganschow

This inventor holds 7 USPTO granted patents. Top assignee: National Semiconductor Corporation. Active years: 1991-1996.


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 5

Forward Citations = 113(Granted Patents)


Location History:

  • Puyallup, WA (US) (1991)
  • Trabuco Canyon, CA (US) (1992 - 1996)

Company Filing History:


Years Active: 1991-1996

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7 patents (USPTO):Explore Patents

Title: George E. Ganschow: Innovator in Semiconductor Technology

Introduction

George E. Ganschow is a notable inventor based in Trabuco Canyon, California. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work focuses on improving the performance and characteristics of various electronic components.

Latest Patents

Among his latest patents is the "Inversion Implant Isolation Process." This method enhances the performance of walled emitter bipolar-junction transistors by incorporating a p-type dopant, preferably boron, at the intersection of the isolation oxide and the emitter-base region. This selective implantation does not significantly affect the transistor's function or complicate the fabrication process, while also addressing issues related to intrinsic base boron segregation and oxide charges.

Another significant patent is the "Vertical Fuse Device." This invention features a vertical fuse structure that includes a lightly-doped shallow emitter, which improves fusing characteristics. The design incorporates a buried collector, an overlying base, and an emitter above the base. The emitter is engineered to short through the base when heated to its eutectic melting point, effectively programming the fuse. This innovative approach allows for better reproducible fusing action.

Career Highlights

George E. Ganschow has had a distinguished career at National Semiconductor Corporation, where he has been instrumental in advancing semiconductor technologies. His expertise and innovative mindset have led to the development of several key patents that enhance the functionality of electronic devices.

Collaborations

Throughout his career, Ganschow has collaborated with talented individuals such as Ali A. Iranmanesh and James L. Bouknight. These partnerships have contributed to the successful development of his patented technologies.

Conclusion

George E. Ganschow's contributions to semiconductor technology through his innovative patents have significantly impacted the industry. His work continues to influence the development of advanced electronic components, showcasing the importance of innovation in technology.

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