The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 1996
Filed:
Nov. 19, 1993
Applicant:
Inventor:
George E Ganschow, Trabuco Canyon, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01R / ;
U.S. Cl.
CPC ...
437 31 ; 437 33 ; 437157 ; 437986 ;
Abstract
A method for improving the performance of a walled emitter bipolar-junction transistor and the improved walled emitter bipolar junction transistor resulting therefrom are disclosed. The method involves the incorporation of a p-type dopant, preferably boron, at the intersection of the isolation oxide and the emitter-base region. The selective implantation does not affect the transistor's function in any significant way, does not complicate the fabrication process to any significant degree and eliminates known problems of intrinsic base boron segregation and oxide charges in known walled emitter bipolar junction transistors.