Suwon, South Korea

Geonhee Bae

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Geonhee Bae. Retrieved from https://idiyas.com/inventor/geonhee-bae

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Geonhee Bae: Innovator in Magnetic Memory Technology

Introduction

Geonhee Bae is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of magnetic memory devices. His innovative work has led to the development of a unique patent that enhances memory technology.

Latest Patents

Geonhee Bae holds a patent for a "Magnetic memory device with a plurality of capping layers." This invention includes a substrate with distinct regions, interlayer insulating layers, and capping layers that improve the functionality of magnetic memory devices. The design features a magnetic tunnel junction pattern and a bottom electrode contact, showcasing his expertise in advanced memory technology.

Career Highlights

Bae is currently employed at Samsung Electronics Co., Ltd., a leading technology company known for its innovative products. His work at Samsung has allowed him to be at the forefront of research and development in magnetic memory technology. His contributions have been instrumental in advancing the capabilities of memory devices.

Collaborations

Geonhee Bae has collaborated with notable colleagues, including Seung Pil Ko and Yongjae Kim. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Geonhee Bae's contributions to magnetic memory technology exemplify his dedication to innovation. His patent and work at Samsung Electronics Co., Ltd. highlight his role as a key player in the advancement of memory devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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