The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2024
Filed:
Nov. 30, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seung Pil Ko, Hwaseong-si, KR;
Yongjae Kim, Seongnam-si, KR;
Geonhee Bae, Suwon-si, KR;
Gawon Lee, Suwon-si, KR;
Kilho Lee, Hwaseong-si, KR;
Samsung Electronics Co., Ltd, Gyeonggi-Do, KR;
Abstract
A magnetic memory device may include a substrate including a first region and a second region, a first interlayer insulating layer on the substrate, a first capping layer on the first interlayer insulating layer, the first capping layer covering the first and second regions of the substrate, a second interlayer insulating layer on a portion of the first capping layer covering the first region of the substrate, a bottom electrode contact included in the second interlayer insulating layer, a magnetic tunnel junction pattern on the bottom electrode contact, and a second capping layer on the second interlayer insulating layer, the second capping layer being in contact with the first capping layer on the second region of the substrate.