Geoffrey Richard Nash

Title: Geoffrey Richard Nash: Semiconductor Device Inventor

Introduction

Geoffrey Richard Nash is an inventor associated with Malvern, Great Britain. His work includes semiconductor device design and fabrication methods, with patent records covering two inventions.

Latest Patents

Nash’s patent titled “Semiconductor Device and Fabrication Method” describes a semiconductor junction with a depletion region whose width varies spatially. The variation can be produced by changing the concentration of ionised dopants or by varying the thickness of semiconductor material, including through cells that omit some of that material. The patent also describes a fabrication method that creates this spatial variation.

His patent titled “Method for Fabricating Lateral Semiconductor Device” presents a process for forming a lateral junction device. The method selectively removes semiconductor material to varying depths, creating a gradient in the concentration of charge carriers across an active layer. The described device may also be used in a photon source.

Career Highlights

Nash is associated with QinetiQ Limited and the Secretary of State for Business, Innovation and Skills in the United Kingdom. His patent work focuses on semiconductor structures and fabrication techniques.

Collaborations

Keith James Nash and John Henry Jefferson are identified as Nash’s coworkers.

Conclusion

Geoffrey Richard Nash’s recorded inventions address ways to control semiconductor junction properties through device structure and fabrication, with 2 patents listed.