The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Dec. 17, 2009
Timothy Ashley, Malvern, GB;
Geoffrey Richard Nash, Malvern, GB;
Timothy Ashley, Malvern, GB;
Geoffrey Richard Nash, Malvern, GB;
Qinetiq Limited, Farnborough, Hampshire, GB;
Abstract
A semiconductor device comprising a plurality of regions of semiconductor material forming a junction at an interface there-between, the junction including a depletion region having a width which varies spatially in at least one direction along the depletion region. Without limitation, the spatial variation in depletion region width is provided by ionised dopants having a concentration which varies spatially along said at least one direction. Alternatively, or in addition, the spatial variation in depletion region width is achieved by varying the thickness of the region(s) of semiconductor spatially along said at least one direction, for example by creating a plurality of cells within said region(s) devoid of said semiconductor material. A method of fabricating a semiconductor device comprising the step of varying the width of the depletion region spatially there-within in at least one direction along the depletion region.