Company Filing History:
Years Active: 1978
Title: Geoffrey L Ashcroft: Innovator in Plasma Etching Technology
Introduction
Geoffrey L Ashcroft is a notable inventor based in Harlow, GB. He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative patent related to plasma etching technology. His work has implications for the production of high-density integrated circuits, which are essential in modern electronics.
Latest Patents
Geoffrey L Ashcroft holds a patent for a process involving plasma etching of aluminum films on a semiconductor surface. This method utilizes a carbon tetrachloride glow discharge to achieve etch rates of 2000-3000 A/min. Notably, the addition of 15% ammonia to the plasma prevents the formation of hydrochloric acid when the etched material is exposed to air. This advancement provides a more easily controlled process for manufacturing high-density integrated circuits.
Career Highlights
Throughout his career, Ashcroft has been associated with Itt Industries, Inc., where he has applied his expertise in semiconductor technology. His innovative approach to plasma etching has positioned him as a key figure in the field, contributing to advancements that enhance the efficiency and reliability of integrated circuit production.
Collaborations
Geoffrey L Ashcroft has worked alongside Rudolf A Heinecke, collaborating on various projects that leverage their combined expertise in semiconductor technology. Their partnership has fostered innovation and has led to significant advancements in the industry.
Conclusion
Geoffrey L Ashcroft's contributions to plasma etching technology exemplify the impact of innovation in semiconductor manufacturing. His patent and collaborative efforts continue to influence the development of high-density integrated circuits, showcasing the importance of inventors in advancing technology.