The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 1978
Filed:
Apr. 29, 1976
Applicant:
Inventors:
Rudolf A Heinecke, Harlow, EN;
Geoffrey L Ashcroft, Harlow, EN;
Assignee:
ITT Industries, Incorporated, New York, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
C23F / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 2041 / ; 204298 ; 252 791 ;
Abstract
Aluminum films on a semiconductor surface are etched in a carbon tetrachloride glow discharge. Typical etch rates are 2000-3000 A/min. The addition of 15% ammonia to the plasma prevents HCl formation when the etched material is exposed to air. This process provides a more easily controlled process for the manufacture of high density integrated circuits.