Beijing, China

Gefei Wang

This inventor holds 3 USPTO granted patents and 1 published patent application. Top assignee: Beihang University. Active years: 2023-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gefei Wang. Retrieved from https://idiyas.com/inventor/gefei-wang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3 

% Patents Active = 100.0

Average Co-Inventor Count = 4.3

ph-index = 1


Company Filing History:


Years Active: 2023-2025

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3 patents (USPTO):Explore Patents

Title: **Innovator Spotlight: Gefei Wang**

Introduction

Gefei Wang is an accomplished inventor based in Beijing, China, known for his significant contributions to the field of memory technology. He holds two patents that showcase his innovative ideas and technical expertise, particularly in magnetic random-access memory cells and multi-bit memory units.

Latest Patents

Gefei Wang's latest patents include:

1. **Magnetic Random-Access Memory Cell, Memory and Device** - This patent describes a magnetic random-access memory cell that features a spin-orbit coupling layer along with two magnetic tunnel junctions. The unique design incorporates symmetrical axes with different lengths and specific angular relationships that enhance its functionality, making it suitable for advanced memory applications.

2. **Multi-Bit Memory Cell, Analog-to-Digital Converter, Device and Method** - This invention outlines a multi-bit memory cell equipped with a spin-orbit coupling layer and multiple magnetic tunnel junctions arranged to improve the efficiency of memory operations. The patent emphasizes a simple manufacturing process while also proposing an arrangement where the critical currents of magnetization reversals are systematically varied along the device’s length.

Career Highlights

Gefei Wang is a key member of the team at Beihang University, where he collaborates on various research projects aimed at advancing memory technology. His expertise in magnetic memory systems has positioned him as an influential figure in his field, pushing the boundaries of contemporary memory applications.

Collaborations

As part of his ongoing research, Gefei Wang works alongside esteemed colleagues, including Weisheng Zhao and Zhaohao Wang. Together, they contribute to innovative projects that explore new avenues in memory technology and are dedicated to furthering the academic and practical implications of their findings.

Conclusion

Gefei Wang’s work exemplifies the spirit of innovation within the domain of memory technology. With his impressive portfolio of patents, he continues to inspire future generations of inventors, demonstrating the profound impact that focused research and collaboration can have on technological advancement.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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