The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2023

Filed:

Oct. 22, 2021
Applicant:

Beihang University, Beijing, CN;

Inventors:

Weisheng Zhao, Beijing, CN;

Zhaohao Wang, Beijing, CN;

Kaihua Cao, Beijing, CN;

Gefei Wang, Beijing, CN;

Min Wang, Beijing, CN;

Assignee:

BEIHANG UNIVERSITY, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H10N 52/00 (2023.01); H10B 61/00 (2023.01); H10N 52/80 (2023.01);
U.S. Cl.
CPC ...
H10N 52/00 (2023.02); G11C 11/1675 (2013.01); H10B 61/00 (2023.02); H10N 52/80 (2023.02);
Abstract

The present disclosure provides a multi-bit memory cell, an analog-to-digital converter, a device and a method. The multi-bit memory cell comprises: a spin-orbit coupling layer and a plurality of magnetic tunnel junctions disposed on the spin-orbit coupling layer, the plurality of magnetic tunnel junctions comprising a plurality of first magnetic tunnel junctions; the plurality of first magnetic tunnel junctions are sequentially arranged along a length direction of the spin-orbit coupling layer, and critical currents of reversals of the magnetizations of free layers of the plurality of first magnetic tunnel junctions are progressively increased or decreased in sequence along the length direction. The present disclosure provides a multi-bit memory unit with simple manufacturing process and structure.


Find Patent Forward Citations

Loading…