Bouffémont, France

G/e/ Rard Tourillon

This inventor holds 1 USPTO granted patent. Top assignee: Compagnie Generale D'electricite. Active years: 1984.

IDiyas Innovation Intelligence. (2026). Inventor Profile: G/e/ Rard Tourillon. Retrieved from https://idiyas.com/inventor/ge-rard-tourillon

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 1984

Loading Chart...
1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Gérard Tourillon in Silicon Wafer Technology

Introduction

Gérard Tourillon, an accomplished inventor based in Bouffemont, France, has made significant strides in the field of semiconductor technology. With one patent to his name, his innovations focus on enhancing the understanding and characterization of silicon wafers, which are essential components in various electronic devices.

Latest Patents

Gérard's notable patent, titled "Method and device for determining the physical characteristics of silicon," outlines a sophisticated approach for evaluating the physical traits of silicon wafers. In this method, one side of the wafer is temporarily affixed to the base of a container, effectively closing off a designated hole. This allows for an electrical connection to be made through the hole, enabling the wafer to serve as a working electrolyte in a specialized cell. By employing an auxiliary electrode placed in the electrolyte, this innovative setup facilitates the determination of both crystallographic and electrical characteristics of silicon samples, advancing the field of material science.

Career Highlights

Tourillon's career has been marked by his dedication to research and development, prominently displayed during his tenure at Compagnie Générale d'Électricité, a leading company in the electrical and energy sector. His work has not only contributed to the advancement of silicon wafer technology but has also set a foundation for future innovations within the industry.

Collaborations

Throughout his career, Gérard has collaborated with esteemed colleagues such as Jean-Yves Barraud and François Arnould. Together, they have fostered a creative and innovative work environment that promotes the sharing of ideas and technological advancements, further supporting the evolution of semiconductor technology.

Conclusion

Gérard Tourillon's contributions to the field of silicon wafer characterization exemplify the importance of innovation in technology. His patent serves as a testament to the evolving landscape of semiconductor research, showcasing how dedicated inventors like him continue to pave the way for advancements in the industry. As technology progresses, the methods developed by Tourillon may inspire further innovations that enhance our understanding of materials and their applications in the modern world.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…