The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 1984

Filed:

Sep. 08, 1983
Applicant:
Inventors:

Jean-Yves Barraud, Paris, FR;

G/e/ rard Tourillon, Bouffemont, FR;

Francois Arnould, Ollainville, FR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N / ;
U.S. Cl.
CPC ...
204 / ; 2042 / ; 204 / ; 324 715 ;
Abstract

In a method for determining the physical characteristics of a silicon wafer, one side of the wafer (4) is removably fixed to the base (2) of a container (1) so as to close off a hole (3) therein. An electrical connection to this side of the wafer (4) is made thru the hole (3). The wafer (4) forms the working electrolyte of a cell comprising an electrolyte contained in the container (1). An auxiliary electrode (14) is removably placed in the electrolyte. The method and the device implementing it can be used to determine the crystallographic and electrical characteristics of a sample of silicon.


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