Fremont, CA, United States of America

Ge Gao

This inventor holds 3 USPTO granted patents. Top assignee: Invensense, Inc.. Active years: 2015-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ge Gao. Retrieved from https://idiyas.com/inventor/ge-gao-el41ukvc

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2015-2018

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3 patents (USPTO):Explore Patents

Title: Innovations by Ge Gao

Introduction

Ge Gao is an accomplished inventor based in Fremont, CA. He has made significant contributions to the field of sensor technology, holding a total of 3 patents. His work focuses on enhancing the functionality and reliability of sensor data processing.

Latest Patents

Ge Gao's latest patents include innovative systems and methods for time stamping sensor data. These systems provide a mechanism for assigning time stamps to data samples generated by sensors, ensuring accurate data retrieval. Additionally, he has developed a method and system for providing a self-test on sensors coupled to a device. This self-test configuration enhances the reliability of devices by enabling a self-test mechanism in the kernel space of memory.

Career Highlights

Ge Gao is currently employed at Invensense, Inc., where he continues to push the boundaries of sensor technology. His work has been instrumental in developing advanced solutions that improve the performance of various devices.

Collaborations

Ge has collaborated with notable colleagues, including William Kerry Keal and James Robert Lim, contributing to a dynamic and innovative work environment.

Conclusion

Ge Gao's contributions to sensor technology through his patents and work at Invensense, Inc. highlight his role as a leading inventor in the field. His innovative approaches continue to shape the future of sensor data processing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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