Helsinki, Finland

Gaurav Pathak

This inventor holds 1 USPTO granted patent. Top assignee: Asm IP Holding B.v.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gaurav Pathak. Retrieved from https://idiyas.com/inventor/gaurav-pathak-gsv12gql

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Gaurav Pathak and Amorphous Boron Nitride Innovation.

Introduction

Gaurav Pathak is an inventor associated with Helsinki, Finland, and the semiconductor materials field. His patent work concerns methods for forming amorphous boron nitride layers on a substrate.

Latest Patents

Pathak is associated with 1 patent: “Method for an Amorphous Boron Nitride Layer and Associated Amorphous Boron Nitride Layers.” The disclosed methods involve providing a boron precursor and nitrogen reactive species to a reaction chamber to deposit an amorphous boron nitride layer on a substrate.

Career Highlights

Pathak is associated with ASM IP Holding B.V. His patent reflects work on deposition processes and advanced materials relevant to semiconductor manufacturing.

Collaborations

His listed coworkers include Mikko Ruoho and Viljami J. Pore.

Conclusion

Gaurav Pathak’s patent work focuses on methods for depositing amorphous boron nitride layers, connecting his inventive contributions with semiconductor materials and manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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