Gary Menezes

Title: Gary Menezes: Innovator in Non-Volatile Memory Technology

Introduction

Gary Menezes is a prominent inventor based in San Jose, California. He has made significant contributions to the field of non-volatile memory technology. His innovative work has led to the development of a unique memory device that enhances data storage capabilities.

Latest Patents

Gary Menezes holds a patent for a "Bias scheme for word programming in non-volatile memory and inhibit disturb reduction." This invention involves a memory device that includes a non-volatile memory (NVM) array, which is divided into a flash memory portion and an electrically erasable programmable read-only memory (EEPROM) portion. The NVM array features charge-trapping memory cells arranged in rows and columns. Each memory cell is equipped with a memory transistor that includes an angled lightly doped drain (LDD) implant, along with a select transistor that has a shared source region with a halo implant. Notably, both the flash memory portion and the EEPROM portion are integrated within a single semiconductor die. Other embodiments of this technology are also disclosed in his patent.

Career Highlights

Gary Menezes is currently associated with Longitude Flash Memory Solutions Ltd., where he continues to push the boundaries of memory technology. His work has been instrumental in advancing the efficiency and reliability of non-volatile memory devices.

Collaborations

Gary has collaborated with notable professionals in the field, including Krishnaswamy Ramkumar and Ali Keshavarzi. Their combined expertise has contributed to the success of various projects within the realm of memory technology.

Conclusion

In summary, Gary Menezes is a key figure in the development of innovative non-volatile memory solutions. His patent and ongoing work at Longitude Flash Memory Solutions Ltd. highlight his commitment to advancing technology in this critical area.