Herts, United Kingdom

Gareth Parry

This inventor holds 1 USPTO granted patent. Top assignee: Epiic Limited. Active years: 2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gareth Parry. Retrieved from https://idiyas.com/inventor/gareth-parry

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2007

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1 patent (USPTO):Explore Patents

Title: Gareth Parry - Innovator in Semiconductor Technology

Introduction

Gareth Parry is a notable inventor based in Herts, GB. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods of producing integrated semiconductor components.

Latest Patents

Gareth holds a patent for a "Method of producing integrated semiconductor components on a semiconductor substrate." This patent describes a method that involves forming a predetermined relief pattern on a substrate's surface and epitaxially depositing a layer made from a mixture of Group III and Group V elements. The unique aspect of this method is that it allows for different band gaps within various areas of the substrate, achieved through a single-step deposition process.

Career Highlights

Gareth is associated with Epiic Limited, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of integrated circuits and semiconductor components.

Collaborations

Gareth has collaborated with notable colleagues, including Timothy Simon Jones and Paul Nicholas Stavrinou, contributing to various projects within the semiconductor industry.

Conclusion

Gareth Parry's innovative approach to semiconductor technology has led to advancements that benefit the industry. His patent and work at Epiic Limited highlight his role as a key figure in this field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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